Molding apparatus for manufacturing a semiconductor device and method using the same

ABSTRACT

A molding apparatus including an upper half having a substrate mounting plate; and a lower half coupled with the upper half to form a cavity there between, wherein the substrate mounting plate faces the cavity, wherein the lower half includes a projecting part which has a top surface which faces the cavity and which projects from the bottom surface of the lower half toward a substantial center point of the substrate mounting plate, wherein the substrate mounting plate is adjustably mounted on the upper half and movable toward the lower half, and wherein the upper half includes a clamp mounted thereon which surrounds the projecting part when the upper and lower halves are coupled with each other.

This is a Divisional of U.S. application Ser. No. 11/785,154, filed Apr.16, 2007, and allowed on Jul. 23, 2009 now U.S. Pat. No. 7,621,732, thesubject matter of which is incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a molding apparatus for manufacturing asemiconductor device, and in particular, relates to a molding apparatusfor encapsulating a semiconductor device having a W-CSP (Wafer-levelChip Size Package) structure and a method using the same.

2. Description of the Related Art

A semiconductor package having approximately the same size as asemiconductor chip diced from a semiconductor wafer is typicallyreferred to as a CSP (Chip Size Package). A CSP in which semiconductorchips formed in a semiconductor wafer is packaged at the wafer level isreferred to as a “W-CSP”.

In a method of manufacturing a semiconductor device by W-CSP processing,a resin-encapsulation step in which a mold is used has been known.

A method of manufacturing a semiconductor device is described in, forexample, “Japanese Patent Kokai No. 2001-185568” (a document D1). Whileusing a detachable metal mold having a first metal mold part and asecond metal mold part, the semiconductor device is manufactured byresin-encapsulation of a substrate formed with semiconductor elements.The resin encapsulation of the semiconductor device is performed byapplying a uniform molding pressure to the substrate.

In particular, the method of manufacturing the semiconductor devicedisclosed in the document D1 has the following steps.

The method includes a substrate mounting step in which the substrate ismounted on the first metal mold part, a resin mounting step in which anencapsulation resin material for encapsulating is applied to thesubstrate, and a resin layer forming step in which the substrate isencapsulated with the encapsulation resin material. In the resin layerforming step, a resin layer is formed by compressing the resin materialbetween the first metal mold part and the second metal mold part so thatthe encapsulation resin material extends over a large area of thesubstrate by applying a molding pressure on the encapsulation resinmaterial.

In the method for manufacturing the semiconductor device having theW-CSP structure while using the detachable metal mold, the encapsulationresin material is mounted on applied to a semiconductor wafer which ismounted on the second metal mold part. Therefore, there is a probabilitythat columnar electrodes formed on the semiconductor wafer are probablydeformed by the encapsulation resin material on which the moldingpressure is applied.

Moreover, there is the following problem in the method. Air in a cavityof the detachable metal mold is not easily evacuated, so that air voidsare prone to be generated in the encapsulation resin material of thesemiconductor device. The generation of the air voids will decrease theyield rate of the semiconductor device.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a molding apparatus forencapsulating a semiconductor device having a W-CSP structure and amethod of manufacturing the semiconductor device using the same, whichmethod can prevent deformation of columnar electrodes of thesemiconductor device and also can prevent air voids generated in aresin-encapsulated part by simple processes.

According to a first aspect of the present invention, there is aprovided a molding apparatus comprising an upper half having a substratemounting plate and a lower half coupled with the upper half to form acavity therebetween. The substrate mounting plate faces to the cavity,and the lower half includes a projecting part which faces to the cavityand projects to the substantial center of point of the substratemounting plate.

According to a second aspect of the present invention, there is aprovided a method of manufacturing a semiconductor device includes thefollowing steps.

(1) A molding apparatus comprising an upper half having a substratemounting plate and a lower half coupled with the upper half to form acavity therebetween is prepared. The substrate mounting plate faces tothe cavity, and the lower half includes a projecting part which faces tothe cavity and projects to the substantial center of point of thesubstrate mounting plate.

(2) A semiconductor substrate is fixed on the substrate mounting plateof the upper half. The semiconductor substrate includes a chip formationregion and a circumferential region which surrounds the ship formationregion. The semiconductor substrate further includes a first principalsurface on which interconnection layers formed in the chip formationregion and columnar electrodes connected to the interconnection layersare formed and a second principal surface which is reverse to the firstprincipal surface.

(3) A release film is attached so as to cover a surface of the lowerhalf facing to the cavity.

(4) The upper half and the lower half are heated.

(5) An encapsulating resin material is mounted on the release film.

(6) The semiconductor substrate is encapsulated with the resinencapsulating material by clamping either one of the lower half or theupper half on the other while forming a vacuum in the cavity aftercoupling the lower half and the upper half.

A semiconductor substrate mounted on an upper half of a moldingapparatus is separated from an encapsulation resin material at the timeof forming a vacuum in a cavity, so that the encapsulation resinmaterial does not contact to the columnar electrodes. Thus, deformationof the columnar electrodes can be effectively prevented.

A molding apparatus of the present invention has an upper half and alower half coupled with the upper half to form a cavity therebetween.The lower half includes a projecting part which faces to the cavity andprojects to the substantial center of point of the substrate mountingplate. Thus, a melted encapsulation resin material is spread from thecenter of a semiconductor substrate to outer edge thereof. The meltedencapsulation resin material can be uniformly spread over thesemiconductor substrate while preventing generation of voids.

A molding apparatus of the present invention includes a lower halfhaving a projecting part, thus a manufacturing processing can be simplyperformed. The present invention contributes to cost-reduction ofmanufacturing a semiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a perspective top view of a semiconductor device ofthe present invention.

FIG. 1B illustrates a cross-sectional view of the semiconductor devicetaken along I-I′ line of FIG. 1A.

FIG. 2A illustrates a top view of a semiconductor wafer of the presentinvention.

FIG. 2B illustrates a enlarged top view of the semiconductor wafer ofFIG. 2A.

FIG. 3A illustrate a cross-sectional view of a semiconductor device in abeginning step of manufacturing.

FIG. 3B illustrate a cross-sectional view of the semiconductor device ina further step of manufacturing.

FIG. 3C illustrate a cross-sectional view of the semiconductor device ina further step of manufacturing.

FIG. 4A illustrates a bottom view of a first metal mold part of amolding apparatus which is a first configuration example of moldapparatuses of the present invention.

FIG. 4B illustrates a top view of a second mold the molding apparatus.

FIG. 5 illustrates a side view of the first metal mold part taken alongI-I′ dashed line of FIG. 4A and second metal mold part taken alongII-II′ dashed line of FIG. 4B.

FIG. 6A illustrates a top view of a second mold of a molding apparatuswhich is a second configuration example of mold apparatuses of thepresent invention.

FIG. 6B illustrates a side view of the molding apparatus of the secondexample.

FIG. 7A illustrates a top view of a second mold of a molding apparatuswhich is a third example of mold apparatuses of the present invention.

FIG. 7B illustrates a side view of the molding apparatus of the thirdexample.

FIG. 8A illustrates a side view of a molding apparatus in a beginningstep of resin-encapsulation.

FIG. 8B illustrates a side view of the molding apparatus in a furtherstep of resin-encapsulation.

FIG. 9A illustrates a side view of the molding apparatus in a furtherstep of resin-encapsulation.

FIG. 9B illustrates a side view of the molding apparatus in a furtherstep of resin-encapsulation.

FIG. 10A illustrates a top view of a second mold of a molding apparatuswhich is a fourth example of mold apparatuses of the present invention.

FIG. 10B illustrates a side view of the second mold of FIG. 10A.

FIG. 11A illustrates a top view of an encapsulation resin materialmounted on a second metal mold part of the present invention.

FIG. 11B illustrates a cross-sectional view of the encapsulation resinmaterial taken along II-II′ dashed line of FIG. 11A.

DETAILED DESCRIPTION IF THE INVENTION

Embodiments of the present invention will now be described withreference to drawings. In the drawings, shapes of, sizes of, andarrangements of components are only schematically illustrated in extentto which the present invention can be easily understood. The presentinvention is not especially limited to the drawings.

Moreover, in the following description, specific materials,manufacturing conditions, and numerical conditions etc. are merely oneof favorable examples. Therefore, the present invention is not definedby these conditions. In the drawings, similar components are denoted bythe same reference numerals and are not further described in someinstances.

CONFIGURATION EXAMPLE OF SEMICONDUCTOR DEVICE

First of all, a semiconductor device 10, which is a configurationexample of semiconductor devices of the present invention, will now bedescribed with reference to FIGS. 1A and 1B.

FIG. 1A is a perspective top view showing a semiconductor device 10(hereinafter also called semiconductor chip) as viewed from the top ofsemiconductor device 10 for describing arrangement of components formedtherein. An encapsulating part 34 formed on the semiconductor device 10is omitted in FIG. 1A for easy identification of interconnectionstructures of the device. FIG. 1B is a cross-sectional view of thesemiconductor device 10 taken along dash line I-I′ of FIG. 1A. In FIG.1B, the encapsulating part 34 is illustrated.

The semiconductor device 10 is manufactured by W-CSP processing. Acircuit element configuration region for configuring predeterminedcircuit elements is formed in a semiconductor substrate 12 by a waferprocessing. In FIGS. 1A and 1B, an element region 14 corresponds to thecircuit element configuration region. In typical, a plurality of activedevices, each of which has integrated circuits such as LSI, are formedin the element region 14. In the following description, a structuralbody, in which the element region 14 is formed in the semiconductorsubstrate 12, is hereinafter called a semiconductor body 13. With regardto the semiconductor body 13, a surface 14 a of the element region 14corresponds to a surface of the semiconductor body 13. The planar shapeof the element region 14 is typically rectangular (square orrectangular).

Typically, multilayer interconnection structures (not shown) forinterconnecting the active devices are formed in the element region 14so that the active devices can be cooperated so as to performpredetermined functions.

A plurality of electrode pads 18 (hereinafter circuit element connectionpads), which are connected to the circuit elements and theinterconnection structures of the element region 14, are formed on theelement region 14. A semiconductor substrate 11 (hereinafter asemiconductor wafer) is configured by a semiconductor body 13, theelectrode pads 18, and interconnection structures 30.

As shown in FIG. 1A, the plurality of the circuit element connectionpads 18 are aligned on the surface of the element region 14 along outeredge of the rectangular element region 14. Distances between the circuitelement connection pads 18 are aligned substantially equivalent to eachother.

A plurality of external terminals 32, which are surrounded by thecircuit element connection pads 18, are arranged on a central zone of arectangular plane region which corresponds to the element region 14 ofthe semiconductor wafer 11. The central zone corresponds to an inside ofthe alignment of the circuit element connection pads 18 as viewed fromthe top surface of the semiconductor device 10.

The external terminals 32 are aligned at the same pitch.

Each of the external terminals 32 are electrically connected to each ofthe circuit element connection pads 18 by the fan-in interconnectionstructures 30.

As shown in FIG. 1B, a passivation film 20 is formed on thesemiconductor body 13. An insulating film 22 is formed on thepassivation film 20. Each of the plurality of circuit element connectionpads 18 is partially exposed to the insulating film 22.

The insulating film 22 is formed so that each of the plurality ofcircuit element connection pads 18 is partially exposed therefrom. Eachof the plurality of circuit element connection pads 18 is electricallyconnected to redistribution wiring layers 24.

Each of the interconnection structures 30 includes a columnar electrode28 (post electrode) and the redistribution wiring layer 24. Each of thecolumnar electrodes 28 is electrically connected to each of the externalterminals 32. Each of the redistribution wiring layers 24 electricallyconnects between the circuit element connection pad 18 and the columnarelectrode 28. A part of the redistribution wiring layer 24 correspondsto a columnar electrode pad 26. Each of the columnar electrodes 28 iselectrically connected to each of the columnar electrode pads 26.

The interconnection structures 30 are encapsulated by an encapsulationpart 34 (an encapsulation resin material) so that the top surfaces ofcolumnar electrodes 28 are exposed from the encapsulation part 34. Theencapsulation part 34 is formed on the insulating film 22 on which theredistribution wiring layers 24 are formed.

The external terminals 32, which are, for example, solder balls, areformed on the top surfaces of the columnar electrodes 28.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A method of manufacturing a semiconductor device 10 is described withreference to FIGS. 1A and 1B will now be schematically described withreference to FIGS. 2A, 2B, 3A, 3B, and 3C.

A semiconductor device 10 of the present invention is manufactured bydicing a semiconductor substrate 12 into a plurality of semiconductorbodies, each of which corresponds to the semiconductor device 10. Thesemiconductor devices 10 are arranged in a matrix form.

First of all, a method for manufacturing a semiconductor device 10 willnow be described with reference to FIGS. 2A and 2B with relation to adicing step in which a semiconductor wafer 11 is separated intoindividual semiconductor devices 10.

FIG. 2A is a schematic top view showing a semiconductor wafer 11. Thesemiconductor wafer 11 shown in FIG. 2A is formed by a wafer processingand thus not individually diced into the plurality of semiconductordevices 10. FIG. 2B is a schematic enlarged top view showing thesemiconductor wafer 11 of FIG. 2A for describing arrangement of theplurality of semiconductor devices 10 formed in the semiconductor wafer11.

As shown in FIGS. 2A and 2B, a plurality of scribe lines L1 is formed ingridlike pattern on the semiconductor wafer 11. Each of thesemiconductor devices 10 is formed as a rectangular area defined bythese scribe lines L1.

An overall planar shape of the semiconductor wafer 11 is typicallycircular. A marginal region 11 d, in which the plurality ofsemiconductor devices 10 are not formed, exists along the outer edge ofthe semiconductor wafer 11. A partial region of the semiconductor wafer11, which is enclosed by the marginal region 11 d, corresponds to a chipformation region 11 c where the plurality of semiconductor devices 10are formed.

One piece of the semiconductor devices 10, which is denoted by a dotpattern in FIG. 2A, is enlarged in FIG. 2B. The scribe lines L1 are alsoshown in FIG. 2B. Each of portions defined by the scribe lines L1corresponds to one semiconductor device 10.

That is, the semiconductor wafer 11 is diced along the scribe lines L1into individual semiconductor devices 10.

Next, a method of manufacturing a semiconductor device 10 is describedwith reference to FIGS. 3A, 3B, and 3C.

FIG. 3A is a schematic cross-sectional view showing a semiconductorwafer 11 in a beginning step. FIG. 3B is a schematic cross-sectionalview showing a semiconductor wafer 11 in a further step. FIG. 3C is aschematic cross-sectional view showing a semiconductor wafer 11 in afurther step.

As shown in FIG. 3A, a semiconductor substrate 12 which is, for example,a silicon (Si) wafer is prepared. The semiconductor substrate 12includes an element region 14 in which circuit elements including aplurality of active devices etc. are formed by a normal waferprocessing.

Circuit element connection pads 18 are formed on a surface 14 a of theelement region 14. Each of the circuit element connection pads 18 isformed from either one of an alloyed material including Al (aluminum),an alloyed material including Au (gold), and an alloyed materialincluding Cu (copper).

Next, a passivation film 20 is formed on the semiconductor substrate 12.The passivation film 20 is formed from, for example, a silicon nitride(SiN) film about 0.5 to 1.0 micrometers in thickness.

In the passivation film 20, apertures 21 are formed so that the circuitelement connection pads 18 are partially exposed from the passivationfilm 20.

Next, an insulating film 22 is formed on the passivation film 20 byusing a well-known spin coat method. The insulating film 22 is formedfrom an insulating material, for example, polyimide about tenmicrometers in thickness. In the insulating film 22, apertures 23 areformed so that the circuit element connection pads 18 are partiallyexposed from the insulating film 22. The surface of insulating film 22is substantially parallel to the surface 14 a of the element region 14.

Next, as shown in FIG. 3B, interconnection structures 30, which areconnected to the circuit element connection pads 18 through theapertures 23, are formed on the insulating film 22. Then, thesemiconductor wafer 11 shown in FIG. 3B is formed. As described, each ofthe interconnection structures 30 includes a columnar electrode pad 26.

When the interconnection structures 30 are formed, redistribution wiringlayers 24 passing through the apertures 23 are formed on the insulatingfilm 22. And then, columnar electrodes 28 are formed on theredistribution wiring layers 24.

The columnar electrodes 28 are formed by using a liftoff technique. Forexample, copper (Cu) is coated by means of a well-knownphotolithographic technique by using a conventional method while using aresist mask patterned. Then, the columnar electrodes 28 are formed by aprocess in which the resist mask is removed by a so-called lift-offtechnique.

It is preferable that the columnar electrodes 28 are formed verticallywith respect to the surface of insulating film 22 and that transversecross sections of the columnar electrodes 28 have a circler shape.

The semiconductor wafer 11, which has the semiconductor body 13, thepassivation film 20, the circuit element connection pads 18, theinsulating film 22, and the interconnection structures 30, is formed.

Then, as shown in FIG. 3C, an encapsulating part 34 is formed on thesemiconductor wafer 11 by using an encapsulation resin material, forexample, an epoxy resin which is used for encapsulating the columnarelectrodes 28 (the detail will be described later).

Next, the top surfaces of columnar electrodes 28 are exposed from theencapsulating part 34 in a grind step.

The semiconductor wafer 11, which are formed after completion of theabove-described steps, is ground and diced along scribe lines L1described above with reference to FIG. 2B. And then, the semiconductorwafer 11 is divided into individual semiconductor chips (thesemiconductor devices 10).

Thus, the semiconductor devices 10, each of which has the structuredescribed with reference to FIG. 1A, are manufactured from the onesemiconductor wafer 11.

An encapsulation process of the present invention and configurationexamples of a molding apparatus therefor will now be described.

First Configuration Example of Metal Mold

A first configuration example of a metal mold (molding apparatus) usedfor a method of manufacturing a semiconductor device of the presentinvention is described with reference to FIGS. 4A, 4B, and 5.

FIG. 4A is a schematic bottom view of a first metal mold part of a firstconfiguration example of the present invention. FIG. 43 is a schematictop view of a second metal mold part of the first configuration example.

FIG. 5 is a schematic cross-sectional view of a metal mold (moldingapparatus) having the first metal mold part of FIG. 4A and the secondmetal mold part of FIG. 4B. The cross-sectional view of the first metalmold part in FIG. 5 is taken along I-I′ dashed line of FIG. 4A. Thecross-sectional view of the second metal mold part in FIG. 5 is takenalong II-II′ dashed line of FIG. 4B.

As shown in FIG. 5, a metal mold 300 has a first metal mold part 100 anda second metal mold part 200. The first metal mold part 100 is placed onthe second metal mold part 200 so that the first metal mold part 100 andthe second metal mold part 200 face each other.

A metal mold elevating system (not shown) for adjusting a relativedistance between the first metal mold part 100 and the second metal moldpart 200 is provided to either one of the first metal mold part 100 orthe second metal mold part 200 or both of the first metal mold part 100and the second metal mold part 200. By the metal mold elevatingsystem(s), the first metal mold part 100 and the second metal mold part200 are tightly coupled to each other so as to form a space (hereinafter“cavity”) in which a vacuum is formed (the detail is described later).The metal mold elevating system(s) can elevate up and dawn either one ofthe first metal mold part 100 or the second metal mold part 200 or bothof the first and second mental molds 100 and 200 while maintaining avacuum in the cavity. The cavity is connected to a cavity airintake/exhaust means for forming a vacuum therein.

The first metal mold part 100 has a tabular first base part 120. Asubstrate contacting region 120 a (hereafter “a substrate mountingsurface”) is formed on an undersurface of the first base part 120. Thesubstrate mounting surface 120 a has approximately a circular shapewhose size and shape are dependent on a semiconductor wafer. Hereafter,a central point of the substrate mounting surface 120 a is defined as “afirst central point C1”.

The first metal mold part 100 also has support arms 112 for fixing asemiconductor wafer. The support arms 112, which are separated from eachother, maintain a space through which the semiconductor wafer can beentered. As shown in FIG. 4A, the support arms 112 are fixed into thefirst base part 120 so as to surround the semiconductor wafer alongouter edge of the first base part 120. Six support arms 112, each ofwhich penetrates into the first base part 120, are provided in the firstconfiguration example of the present invention. Each of the support arms112 is configured by functional parts such as an extensible hydrauliccylinder etc.

The first metal mold part 100 also has a clamp 110 which is fixed intothe lower ends of support arms 112. The clamp 110 is firmly fixed intothe lower end parts of support arms 112 inserted thereinto.

As shown in FIG. 4A, an aperture 114, whose shape is adjusted for ashape of a semiconductor wafer to be mounted thereon, is formed in theclamp 110. A region of the clamp 110, which surrounds a rim of theaperture 114 and has a ring shape of a predetermined width, isconfigured as a substrate supporting region 110 a for mounting asemiconductor wafer.

Since the substrate supporting region 110 a corresponds to a marginalregion 11 d of a semiconductor wafer 11 as shown in FIG. 2A, theaperture size and shape of the aperture 114 is dependent on a size andshape of a semiconductor wafer to be mounted, and thus the substratesupporting region 110 a is also dependent on a size and shape of asemiconductor wafer.

The second metal mold part 200 includes a second base part 210 and astage 220. The stage 220 faces to the aperture 114 of the clamp 110 ofthe first metal mold part 100. In other words, a surface 220 a of thestage 220 of the second metal mold part 200 faces to the substratemounting plate 120 a of the first metal mold part 100. The stage 220 canbe elevated up and down independent of the second base part 210.

The first configuration example of the metal mold is characterized by,in particular, the second metal mold part 200. The second metal moldpart 200 has a second central point C2 facing to the first central pointC1 of the substrate mounting plate 120 a of the first metal mold part100.

As shown in FIG. 5, the second metal mold part 200 has a projecting part230 formed on the surface 220 a of the stage 220. The projecting part230 is a convex projecting to the first metal mold part 100. Either oneof the top surface or the top of the projecting part 230 corresponds thesecond central point C2. The projecting part 230 has a plurality ofstepped columnar parts.

The projecting part 230 of the first example has three columnar partswhose diameters are different from each other. That is, a first columnarpart 232 has the maximum diameter among the three columnar parts, asecond columnar part 234 has a diameter smaller than the first columnarpart 232, and a third columnar part 236 having the smallest diameter.Each central point of the first column 232, the second column 234, andthe third column 236 is adjusted to the second central point C2. Theprojecting part 230 is configured as a stepwise structure so thatsurface areas of columnar parts decrease in a direction toward the topcolumnar parts.

The apical surface of the projecting part 230 or the top of theprojecting part 23 corresponds to a resin deposition region 230 a onwhich an encapsulation resin material is mounted in an encapsulationstep (the detail will be described later).

A height H1 between the surface 220 a of the stage 220 and the resindisposition region 230 a (the second central point C2), that is, the top(vertex or top surface) of projecting part 230, can be arbitrarily andsuitably configured. The height H1 is preferably about 200 micrometers.

It is also more preferable that the number of the columnar parts of theprojecting part 230 is larger. In this example, the projecting part 230having three columnar parts whose the diameters are different from eachother is described. The projecting part 230 may be configured by two ormore columnar parts whose diameters are different from each other. Theprojecting part 230 is preferably configured in a stepped pattern(pyramidaly) by two to four columnar parts whose diameters are differentfrom each other.

Heights H2, H3, and H4 of the first, second, and third columnar partsare preferably in the range of 50 μm-100 μm. The heights H2, H3, and H4may be different from each other and may be substantially equivalent toeach other.

The second base part 210 of the second metal mold part 200 has aplurality of air intake/exhaust holes 212. As shown in FIG. 4B, the airintake/exhaust holes 212 are formed in the second base part 210 so as tosurround the stage 220. The air intake/exhaust holes 212 are coupled toan air intake/exhaust system 240 for adsorbing a release film (thedetail will be described later). The release film is placed on thesecond base part 210 and the stage 220. The air intake/exhaust system240 is configured by, for example, a vacuum pump and tubes connectingbetween the vacuum pump and the air intake/exhaust holes 212. Either oneof the second base part 210 or the stage 220 may be formed from a porousmaterial having porosity on micrometer scale. In the case, the airintake/exhaust system 240 is connected to either one of the second basepart 210 or the stage 220, which is formed from the porous material. Inaddition, both of the second metal mold part 200 and the second basepart 210 may be formed from a porous material. In this case, the airintake/exhaust system 240 is connected to both of the second metal moldpart 200 and the second base part 210.

It is preferable that the stage 220 has a shape similar to the aperture114 and also has a plane size smaller than that of the aperture 114.

The stage 220 has a stage elevating system 222 by which the stage iselevated up and dawn. The stage elevating system 222 is preferablycomposed by, for instance, a hydraulic cylinder and a servo motor, etc.

SECOND CONFIGURATION EXAMPLE OF METAL MOLD

A second configuration example of a metal mold of the present inventionwill now be described with reference to drawings. Since a first metalmold part of the second configuration example is similar to that of thefirst configuration example, a second metal mold part of the secondconfiguration example is only described. Components similar to that ofthe first configuration example is denoted by the same numerals and arenot further described.

FIG. 6A is a schematic top view of a second metal mold part of a secondconfiguration example of a metal mold of the present invention. FIG. 6Bis a schematic cross-sectional view of the second configuration examplehaving a first metal mold part of FIG. 4A and the second metal mold partof FIG. 6A. The cross-sectional view of the first metal mold part ofFIG. 6B is taken along I-I′ of FIG. 4A. The cross-sectional view of thesecond metal mold part of FIG. 6B is taken along I-I′ of FIG. 6A.

As shown in FIG. 6B, a second metal mold part 200 has a stage 220 onwhich a projecting part 23 facing to a first metal mold part 100 isconvexly formed. The projecting part 230 is configured by a plurality ofrectangular column parts whose planar shapes are rectangular (square).

As shown in FIG. 6A, the projecting part 230 has three rectangularcolumn parts which having planar shapes similar to each other. Thesurface areas of the surfaces of rectangular column parts facing to thefirst metal mold part 100 are different from each other. The projectingpart 230 has a first rectangular column part 231 having the largestsurface areas among three rectangular column parts, a second rectangularcolumn part 233 having the surface areas smaller than the firstrectangular column part 231, and a third rectangular column part 235having the smallest surface areas. Center points of the first, second,and third rectangular column parts, 231, 233, and 235 substantiallycorrespond to a second central point C2 which is a central point of thesecond metal mold part 200. The surface areas of the first, second, andthird rectangular column parts, 231, 233, and 235 decrease in adirection toward the top of rectangular column part. The projecting part230 is configured as a stepwise structure which the first, second, andthird rectangular column parts, 231, 233, and 235 are formed on thestage 220.

In the second configuration example, a surface 235 a of the thirdrectangular column part 235 corresponds to a resin disposition region230 a on which an encapsulation resin material is mounted in anencapsulating step (the detail will be described later).

A height H1 between the surface 220 a of the stage 220 and the resindisposition region 230 a which is a highest point (an apex or a topsurface) of the projecting part 230 can be arbitrarily and suitablyadjusted and preferably about 200 micrometers.

It is also more preferable that the number of rectangular column partsof the projecting part 230 is larger. In the second configurationexample, the projecting part 230 having the three rectangular columnparts whose surface areas are different from each other is described.The projecting part 230 may be configured by two or more rectangularcolumn parts. The projecting part 230 is preferably configured in astepped pattern (pyramidaly) by two to four rectangular column partswhose surface areas are different from each other.

Heights H2, H3, and H4 of the first, second, and third rectangularcolumn parts are preferably in the range of 50 to 100 micrometers. Theheights H2, H3, and H4 may be different from each other and may besubstantially equivalent to each other.

THIRD CONFIGURATION EXAMPLE OF METAL MOLD

A third configuration example of a metal mold of the present inventionwill now be described in reference to drawings. Since a first metal moldpart is similar to that of the first configuration example, a secondmetal mold part is only described. Components similar to that of thefirst configuration example are denoted by the same numerals and are notfurther described.

FIG. 7A is a schematic top view of a second metal mold part of a thirdconfiguration example of a metal mold of the present invention. FIG. 7Bis a schematic cross-sectional view of the third configuration examplehaving the first metal mold part of FIG. 4A and the second metal moldpart of FIG. 7A. The cross-sectional view of the first metal mold partof FIG. 7B is taken along I-I′ of FIG. 4A. The cross-sectional view ofthe second metal mold part of FIG. 7B is taken along I-I′ dashed line ofFIG. 6A.

As shown in FIG. 7B, a second metal mold part 200 has a projecting part230 which is a convex slope projecting and facing to a first metal moldpart 100. The projecting part 230 has an apex (the highest point)thereof which corresponds to a second central point C2. The projectingpart 230 also has an inclination which slops as approaching from theapex thereof to the edge of the second metal mold part 200. Theprojecting part 230 is configured by a upside-down saucer-shapedstructure, that is, a rounded surface which is substantially spherical.

A partial region of the projecting part 230 corresponds to a resindisposition region 230 a where an encapsulation resin material isdisposed in an encapsulating step (the detail will be described later).The partial region of the projecting part 230 overlaps to the secondcentral point C2 and It is configured that a planar shape of the resindisposition region 230 a has an arbitrary and suitable shape.

A height H1 between a surface 220 a of a stage 220 and the secondcentral point C2 which corresponds to a peak (a highest point) of theprojecting part 230 can be arbitrarily and suitably configured. Theheight H1 is preferably about 200 micrometers.

The projecting part 230 of the second metal mold part 200 may be shapedby grinding the stage 220 mechanically. The projecting part 230 of thesecond metal mold part 200 also may be shaped by grinding the stage 220electrically with an electric discharge machining technique.

In addition, the projecting part 230 may be shapes by accumulating aplurality of thin plates (which correspond to the columnar parts and therectangular column parts, as described above) on the stage 220. The thinplates have a circular or rectangular planar shape whose size isdifferent from each other.

According to the metal mold (the first, second, and third configurationexample) of the present invention, the projecting part 230 is formed onthe stage 220 of the second metal mold part 200, so that a moldingpressure is effectively applied on an encapsulation resin materialmounted on the projecting part 230 in an encapsulating step. In thevicinity of the second central point C2 (top of the projecting part230), a larger molding pressure is effectively applied on theencapsulation resin material. Therefore, the encapsulation resinmaterial can be efficiently pervaded from the second center point C2 tothe second base part 210, and thus air voids in the encapsulation resinmaterial, which originate from air in a cavity can be efficientlyprevented.

Encapsulating Step

An encapsulating step in which the above-described metal mold is usedwill now be described with reference to FIGS. 8A, 8B, 9A and 9B. In theencapsulating step described here, a metal mold similar to the firstconfiguration example is used for encapsulating with an encapsulationresin material.

FIG. 8A is a schematic cross-sectional side view of a metal mold havingincluding a first metal mold part and a second metal mold part in abeginning step of encapsulation. FIG. 8B is a schematic cross-sectionalside view of the metal mold in a further step of encapsulation.

FIG. 9A is a schematic cross-sectional side view of the metal mold in afurther step of encapsulation. FIG. 9B is a schematic cross-sectionalside view of the metal mold in a further step of encapsulation.

In the following description, a semiconductor wafer 11 is defined as astructural body in which a plurality of columnar electrodes 28 have beenformed by a wafer processing as described in FIG. 3B.

In addition, an element region 14, circuit element connection pads 18, apassivation film 20, an insulating film 22, redistribution wiring layers24, and columnar electrode pads 26, which are comprised by thesemiconductor wafer 11, are not further described in the followingdescription and are not shown in FIGS. 8A, 8B, 9A, and 9B forsimplicity. A metal mold (molding apparatus) 300 is so arranged that afirst metal mold part 100 is placed above or on a second metal mold part200.

In addition, a surface of the insulating film 22 shown in FIG. 3B isdefined as a first principal surface 11 a of the semiconductor wafer 11.A surface opposed to the first principal surface 11 a is defined as asecond principal surface lib of the semiconductor wafer 11. As shown inFIG. 2A, the semiconductor wafer 11 of FIG. 2A is configured by aplurality of structural body which are diced into a plurality ofsemiconductor devices 10. In the following description, thesemiconductor wafer 11 is configured by two structural bodiescorresponding to two semiconductor devices 10.

First of all, as shown in FIG. 8A, a semiconductor wafer 11, whosesecond principal surface 11 b faces to a first base part 120 of a firstmetal mold part 100, is mounted on a substrate supporting region 110 aof a clamp 110. At the same time, a marginal region 11 d (shown in FIG.2A) of the semiconductor wafer 11 is contacted to the substratesupporting region 110 a. A plurality of columnar electrodes 28 areprojected from an aperture 114 of the clamp 110 so as to face to thesecond metal mold part 200. That is, a first principal surface 11 a ofthe semiconductor wafer 11, on which the columnar electrodes 28 areformed, is exposed through the aperture 114.

Next, the second principal surface 11 b of the semiconductor wafer 11 issustainably contacted to a substrate contacting region 120 a of thefirst metal mold part 100 by shortening support arms 112 to which theclamp 110 is connected. The semiconductor wafer 11 may be continuallyattached to the substrate contacting region 120 a by, for example, usingan adsorption system (not shown). The adsorption system includingthrough-holes is provided in the substrate contacting region 120 a towhich tubes and a vacuum pump are connected through the through-holes.The semiconductor wafer 11 may be sustainably attached by using both ofadsorption system and the clamp 110.

Next, a release film 40 is attached on the second metal mold part 200,that is, on the second base part 210 and the stage 220.

A resin disposition region 40 a, on which an encapsulation resinmaterial is mounted in a later step, is configured on the release film40. The resin disposition region 40 a corresponds to a resin dispositionregion 230 a of the second metal mold part 200.

The release film 40 is sustainably attached on the second metal moldpart 200 by forming a vacuum with an air intake/exhaust system 240connected to air intake/exhaust holes 212.

Next, as shown in FIG. 8B, the first metal mold part 100 and the secondmetal mold part 200 are combined so that a contour of the stage 220 ofthe second metal mold part 200 is within a contour of the aperture 114of the first metal mold part 100.

Next, either one of the first metal mold part 100 or the second metalmold part 200 are heated by a conventional heating system (not shown).Both of the first and second metal mold parts, 100 and 200 may be heatedby the heating system. The heating mechanism may be replaced by aheating/cooling system which can heat and cool.

Next, an encapsulation resin material 50, which is a tablet-shapedsolid, is placed on the resin disposition region 40 a of the releasefilm 40. The encapsulation resin material 50 is not limited to a solid,and, for instance, a resin of a granular type may be available.

A commercial epoxy resin is favorably used for an encapsulation resinmaterial 50. In typical, the epoxy resin has the highest fluidity attemperature in the range of 160 to 180° C. and can keep the highfluidity during a long time period. Accordingly, in the case that theepoxy resin is used as the encapsulation resin material 50, the metalmold are heated at temperature in the range of 160 to 180° C.

The amount of the encapsulation resin material 50 is dependent on a sizeof the semiconductor wafer 11 and a specification of the semiconductordevices 10, that is, a volume occupied by the encapsulation resinmaterial.

In the case that a semiconductor wafer 11 having, for instance, eightinch diameters is encapsulated with an encapsulation resin material, theamount of the encapsulation resin material are determined in thefollowing manner. Multiplying areas of the semiconductor wafer 11 by aheight of the encapsulation resin material gives a volume (an effectivevolume of the encapsulation resin material). By subtracting a volumeoccupied by a plurality of columnar electrodes from the effectivevolume, a proper volume of the encapsulation resin material is derived.In typical, an encapsulation resin material thermally expands orcontracts in its volume during a solidification processing. Therefore,the proper volume is estimated in consideration of the volume expansionor contraction of the resin in the solidification processing. In thisway, an estimated proper volume of the encapsulation resin material isconverted to a weight.

Next, an encapsulation resin material of a granulated type or a fineparticle type, whose weight is predetermined, is shaped (compressed) asa tablet.

The tablet compression processing is described as follows. Aconventional simple tableting machine can be used for the tabletcompression processing, and thus components of the simple tabletingmachine is not described here.

First of all, an encapsulation resin material of, for example, agranulated type is enterer into a die having a predetermined shape. Byfollowing the above-described procedure, a weight of the encapsulationresin material is determined on the basis of a volume after thesolidification processing. The encapsulation resin material of agranulated type is compressed so as to have a tablet-shape whose volumeis in the range from 30% to 70% of a volume occupied by theencapsulation resin material of granulated type. The compressedencapsulation resin material 50 is preferably hard so as not to collapseeven if it is carried by hand. Although a shape of the encapsulationresin material 50 is not especially limited, it is preferable that theencapsulation resin material 50 has a column shape because theencapsulation resin material 50 is required to melt and extend on therelease film 40 in the same shape as the semiconductor wafer 11.

A plane size of the encapsulation resin material 50 is arbitrarily andsuitably designed. A pressure applied on the encapsulation resinmaterial 50 and a duration of the applied pressure can be arbitrarilyand suitably controlled so that the encapsulation resin material 50 hasa predetermined volume.

Next, while keeping the heating temperature, the first metal mold part100 and the second metal mold part 200 are combined so that a contour ofthe stage 220 of the second metal mold part 200 is within a contour ofthe aperture 114 of the first metal mold part 100.

Next, as shown in FIG. 8B, the first metal mold part 100 and the secondmetal mold part 200 are tightly clamped by a metal mold elevating system(not shown). The clamping pressure under which the encapsulation resinmaterial is not leaked to the outside of the clamped first and secondmetal molds is preferable. In specifically, the clamping pressure is inthe range from 10 t (98000N) to 60 t (588000N). By combining the firstmetal mold part 100 and the second metal mold part 200, a cavity 60 isformed between the clamp 110 and the second base part 210.

A height h of the cavity 60 shown in FIG. 8B, to which the thickness ofthe semiconductor wafer 11 is added, is defined by the first and secondmetal mold parts, 100 and 200.

In addition, it is configured that a distance h0 between the top surfaceof the columnar electrodes 28 and the release film 40 is larger than themaximum thickness h1 of the encapsulation resin material 50. Or, it isconfigured that the maximum thickness h1 of the encapsulation resinmaterial 50 is smaller than a distance h0 between the top surface of thecolumnar electrodes 28 and the release film 40.

Next, while keeping the first metal mold part 100 and the second metalmold part 200 at the predetermined heating temperature, air is removedfrom the cavity 60 by a cavity air intake/exhaust means (not shown)connected thereto. The ultimate vacuum is preferably 133.3 Pa (1 Torr)at a maximum in view of prevention of voids.

As shown in FIG. 9A, as a vacuum level in the cavity 60 increases, theencapsulation resin material 50 gradually melts and flows along theprojecting part 230 to eventually cover the surface of the release film40. A melted encapsulation resin material 50′ which is completely meltedis denoted in FIG. 9A in distinction from the encapsulation resinmaterial 50.

Until the melted encapsulation resin material 50 starts to harden, thevacuum level in the cavity 60 is controlled so as to increase to apredetermined level.

In the case of using an epoxy resin as an encapsulation resin material50, in view of voids generation (a length of time before meltedencapsulation resin material 50′ starts to solidify), it is suitablethat the vacuum in the cavity 60 approaches to a predetermined levelwithin five seconds after the encapsulation resin material 50 is mountedon the release film 40.

At the same time when the cavity 60 is depressurized, the stage 220 isgradually elevated up by operating a stage elevating system 222 untilair (space) in the cavity 60 disappears. The air (space) in the cavity60 can be also removed by lowering both of the first metal mold part 100and the second metal mold part 200 while fixing the stage 220.Consequently, the melted encapsulation resin material 50′ is contactedto the first principal surface 11 a, and is attached thereto.

At this time, the molding pressure is largely applied on theencapsulation resin material 50 (the melted encapsulation resin material50′) around the second central point C2 (apex) of the projecting part230. Accordingly, the encapsulation resin material 50 is radiated in alldirection from the second central point C2 to the second base part 210along the slope of projecting part 230. The cavity 60 can be spatiallyfilled with the encapsulation resin material 50. The voids resultingfrom a residual air in the cavity 60 can be effectively prevented.

The vacuum level in the cavity 60 should be lowered to a predeterminedlevel at which the voids in a resin encapsulated part are substantiallyprevented. It is preferably configured that the length of time beforethe vacuum level in the cavity 60 reaches to a predetermined level isshorter than that before air in the cavity 60 is completely disappearedby elevating the stage 220 or by lowering the first and second metalmold parts. In other words, it is preferably configured that a distancefor elevating the stage 220 or for lowering the first metal mold part100 and the second metal mold part 200 is shorter than a distancebetween the melted resin 50′ and the first principal surface 11 a.

In the case of using an epoxy resin as the encapsulation resin material50, the melted resin 50′ is further heated for solidification thereof.The solidification process of the melted resin 50′ is arbitrarily andsuitably performed depending on an encapsulation resin material. In thesolidification process, the melted resin 50′ is formed as aresin-encapsulated part of the semiconductor device.

According to the method for manufacturing (resin-encapsulating) thesemiconductor device of the present invention, the encapsulation resinmaterial 50 mounted on one part of the second metal mold part 200, thatis, on the projecting part 230 is melted. At the same time, theencapsulation resin material 50 (the melted resin 50′) is largelycompressed by, in particular, the projecting part 230 which is formed inthe center of the cavity 60. Thus, the encapsulation resin material 50can easily extend over the cavity 60. The generation of voids in theresin-encapsulated part due to residual air in the cavity 60 can beprevented more effectively. In addition, according to the method of thepresent invention, the resin-encapsulated part can be formed in a shorttime period, at a high yielding rate, and with a high accuracy.

After the solidification process of the encapsulation resin material 50(the melted resin 50′) is completed, the first metal mold part 100 andthe second metal mold part 200, which has been tightly combined witheach other, are decoupled. The semiconductor wafer 11 is released fromthe first metal mold part 100 and the release film 40.

Next, excess of the encapsulation resin material is ground off in agrind step so that top surfaces of the columnar electrodes 28 areexposed. And then, external terminals are connected to the columnarelectrodes 28.

By dicing the semiconductor wafer 11 in a dicing step, a plurality ofsemiconductor devices 10 are obtained.

Embodiment

An embodiment of the method of the present invention described above(effect qualification test) will now be described with reference toFIGS. 10A and 10B.

FIG. 10A is a schematic top view of a second metal mold part of a firstembodiment of the present invention.

FIG. 10B is a schematic cross-sectional side view of the second metalmold part taken along II-II′ line of FIG. 10A.

A stage 220 of a second metal mold part 200 according to the exampleincludes a projecting part 230 having a first column part 232 and asecond column 234 whose diameter is smaller than that of the firstcolumn part 232.

The first column part 232 and the second column part 234 are formed frompapers which are sheared in a circle. Since semiconductor devices aremanufactured in a clean room, these column parts are formed from adustless paper material, that is, a commercial clean paper.

A thickness h3 of the first column part 232 and a thickness h4 of thesecond column part 234 are substantially equivalent to each other.

The first column part 232 and the second column part 234 are formed on astage 220 so that central points of the first column part 232 and thesecond column part 234 correspond to a central point C2 of the secondmetal mold part 200 and that the first column part 232 is formed on thesecond column part 234 having a larger diameter than the first columnpart 232.

A release film 40 is attached on bare surfaces of the first column part232, the second column part 234, and the stage 220.

An encapsulation resin material 50 is placed on the release film 40.

Results will now be described with reference Table 1.

Table 1 shows relations between shapes of a second metal mold part 200(a first column part 232 and a second column part 234) and voidgeneration ratios (%) of semiconductor devices (the number of voids).

Semiconductor wafers having a diameter (φ) of eight inches areencapsulated in the resin-encapsulating process. Column-shapedencapsulation resin materials 50 whose planar shapes are circle andthicknesses (height) are 10 mm are used for encapsulating thesemiconductor wafers.

THE NUMBER THE VOIDS OF NUMBER GENERATION SAMPLES OF VOIDS RATE (%)PRIOR ART 20102 156 0.78 φ140 mm (FIRST 4370 17 0.39 COLOMNAR PART) φ100mm (FIRST 5244 24 0.46 COLOMNAR PART) φ140 mm (FIRST 4370 11 0.25COLOMNAR PART) + φ100 mm (SECOND COLOMNAR PART)

As shown in TABLE 1, in the case of configurations having a first columnpart (φ140 mm or φ100 mm) and having both of a first column part (φ140mm) and a second column part (φ100 mm), void generation ratios can bereduced in comparison with the prior art. In particular, in the case ofthe configuration of both the first columnar part and the secondcolumnar part, the void generation ratio is one third or less than theprior art.

In addition, in the case of the configuration having both of the firstcolumn part (φ140 mm) and the second column part (φ100 mm), the voidgeneration ratio is reduced in comparison with the void generation ratioin the case of the configuration having the first column part (φ140 mm)or the second column part (φ100 mm).

CONFIGURATION EXAMPLE OF ENCAPSULATION RESIN MATERIAL

A configuration example of an encapsulation resin material, which isused for a method of encapsulation of the present invention, will now bedescribed with reference to FIGS. 11A and 11B.

FIG. 11A illustrate a top view of an encapsulation resin materialmounted on a second metal mold part. FIG. 11B illustrate across-sectional view of the encapsulation resin material taken alongII-II′ dashed line of FIG. 11A.

An encapsulation resin material 50 of the configuration example has afirst columnar resin part 52, a second columnar resin part 54 having adiameter smaller than that of the first columnar resin part 52, and aplurality of radial resin parts 56.

The first columnar resin part 52 and the second columnar resin part 54are mounted on a resin disposition region of a release film 40.

As shown in FIG. 11A, central points of the first columnar resin part 52and the second columnar resin part 54 correspond a central point C2 ofthe second metal mold part 200. The second columnar resin part 54 ismounted on the first columnar resin part 52 having a diameter largerthan that of the second columnar resin part 54.

In addition to the first columnar resin part 52 and the second columnarresin part 54, the encapsulation resin material 50 includes theplurality of radial resin parts 56 which are radially disposed so as tosurround the first columnar resin part 52.

It is suitable that the each of the radial resin parts 56 has the samethickness as the first columnar resin part 52 and the second columnarresin part 54. Shapes of the radial resin parts 56 may be arbitrarilyand suitably designed. The radial resin parts 56 whose planar shapesare, for example, a rectangle or an ellipse may be designed. Each of theradial resin parts 56 of the example has a planar shape that a bamboograss having the major axis that extends straight to the sin. It ispreferable that each long axis of the radial resin parts 56 has samelength.

The number of the radial resin parts 56 can be arbitrarily and suitablyconfigured. The encapsulation resin material 50 of the configurationexample has eight radial resin parts 56. Eight radial resin parts 56 areroundly disposed at regular intervals so that consecutive angles betweenthe long axis adjacent to each other is 45°. As shown in FIG. 11A, eachof the radial resin parts 56 is mounted on the release film 40 so as tocontact the first columnar resin part 52. Each of the radial resin parts56 may be separated from the first columnar resin part 52.

The first columnar resin part 52, the second columnar resin part 54, andthe radial resin parts 56 are individually formed by a simple tabletingmachine, and then they are mounted on the release film 40.

As described above, if the plurality of resin parts are molded and thenthe encapsulation process is performed, the melted resin material can beextended more effectively and more rapidly form the center of cavity tothe edge of cavity, in other words, from the center of semiconductorsubstrate to the outside edge of semiconductor substrate. Therefore, thegeneration of air voids in the encapsulation part, which is resultedfrom the residual air in the cavity, can be prevented more effectively.In addition, the resin encapsulated part can be fabricated in a shortperiod of time, at a yield ratio, and with a high accuracy.

The encapsulation resin material 50 having the plurality of resin partsaccording to the embodiment can be used in the encapsulating process inwhich the second metal mold part is used. Voids generating in theencapsulating process can be prevented more effectively.

This application is based on Japanese Patent Application No. 2006-142991which is herein incorporated by reference.

1. A method of manufacturing a semiconductor device comprising the stepsof; preparing a molding apparatus comprising an upper half having asubstrate mounting plate and a lower half coupled with said upper halfto form a cavity therebetween, said substrate mounting plate facing tosaid cavity, and said lower half including a projecting part which facesto said cavity and projects to a substantial center point of saidsubstrate mounting plate; fixing a semiconductor substrate on saidsubstrate mounting plate of said upper half, said semiconductorsubstrate including a chip formation region and a circumferential regionwhich surrounds said chip formation region, a first principal surface onwhich interconnection layers formed in said chip formation region andcolumnar electrodes connected to said interconnection layers are formed,and a second principal surface which is reverse to said first principalsurface; attaching a release film so as to cover a surface of said lowerhalf facing to said cavity; heating said upper half and said lower half;mounting an encapsulating resin material on said release film;encapsulating said semiconductor substrate with said resin material byclamping either one of said lower half or said upper half on the otherwhile forming a vacuum in said cavity after coupling said lower half andsaid upper half.
 2. The method of manufacturing a semiconductor deviceaccording to claim 1, wherein said projecting part is configured by aplurality of circular column parts which are stepwisely formed so thatsurface areas thereof decrease in a direction toward the top thereof. 3.The method of manufacturing a semiconductor device according to claim 1,wherein said projecting part is configured by a plurality of rectangularcolumn parts which are stepwisely formed so that surface areas thereofdecrease in a direction toward the top thereof.
 4. The method ofmanufacturing a semiconductor device according to claim 1, wherein saidprojecting part is configured by a curved surface facing to said cavity.5. The method of manufacturing a semiconductor device according to claim1, wherein said encapsulating resin material comprises a circular columnresin part and a plurality of radial parts which are radially disposedso as to surround said circular column resin part.
 6. The method ofmanufacturing a semiconductor device according to claim 2, wherein saidencapsulating resin material comprises a circular column resin part anda plurality of radial parts which are radially disposed so as tosurround said circular column resin part.
 7. The method of manufacturinga semiconductor device according to claim 3, wherein said encapsulatingresin material comprises a circular column resin part and a plurality ofradial parts which are radially disposed so as to surround said circularcolumn resin part.
 8. The method of manufacturing a semiconductor deviceaccording to claim 4, wherein said encapsulating resin materialcomprises a circular column resin part and a plurality of radial partswhich are radially disposed so as to surround said circular column resinpart.